Radiation-Resistant P-Channel MOSFET Joins Space-Hardened Family

Radiation-Resistant P-Channel MOSFET Joins Space-Hardened Family

Infineon Technologies Introduces Radiation-Tolerant P-Channel MOSFET for NewSpace Applications

Infineon Technologies, a leading provider of semiconductor solutions, has announced the launch of a new 60-V P-channel power MOSFET designed specifically for NewSpace applications. This innovative device offers several advantages over traditional rad-hardened devices, focusing on efficiency, power density, and switching performance.

The key advantages of Infineon's 60-V P-channel MOSFET for NewSpace include lower RDS(on) and Figure of Merit, higher system efficiency and power density, improved switching and thermal performance, and a small footprint and packaging. The OptiMOS™ 5 series, which includes 60 V variants, offers about 15% lower on-resistance and 31% lower RDS(on) × total gate charge compared to alternatives, leading to improved conduction and switching efficiency.

Infineon’s OptiMOS™ technology features reduced switching losses, very low voltage overshoot, and operating junction temperatures up to 175°C, supporting rugged and reliable operation in harsh environments encountered in space. Advanced packaging technologies, including leadless and Cu-clip designs, contribute to space savings and efficient cooling, which support compact satellite and spacecraft power designs.

While traditional rad-hard MOSFETs, which are primarily ESA-qualified for single-event effect (SEE) hardening and radiation tolerance using CoolMOS™ superjunction technology, excel in radiation hardness, they often come at the expense of efficiency and size. In contrast, Infineon’s 60 V P-channel MOSFET focuses more on performance metrics important to modern power management.

| Aspect | Infineon 60 V OptiMOS™ P-Channel MOSFET | Traditional Rad-Hardened MOSFETs | |---------------------------|---------------------------------------------------|-----------------------------------------------| | Radiation Hardening | Not primarily rad-hard; designed for efficiency | ESA-qualified, SEE hardened | | On-Resistance (RDS(on)) | Lower (~15% less) | Higher, as radiation hardness often trades off performance | | Switching Losses | Lower switching and conduction losses | Generally higher | | Power Density & Size | Compact, small footprint, optimized packaging | Often larger due to radiation hardening design| | Max Operating Temperature | Up to 175°C | Varies, typically robust but conservative | | Target Application | High-efficiency DC-DC converters, NewSpace power | Space missions requiring extreme radiations |

The rad-tolerant discretes offered by Infineon are rated for single event effects (SEE) at 46 MeV∙cm/mg linear energy transfer (LET) and are space-qualified to the requirements of the AEC-Q101 standard. These discretes are also now offered as part of Infineon's portfolio for low-Earth-orbit (LEO) systems.

The new 60-V P-channel MOSFET offers a cost-optimized, radiation-tolerant solution for designs using smaller and lighter-weight components. Furthermore, it can be produced in higher volumes using standard manufacturing practices, making it an attractive option for NewSpace developers.

In summary, Infineon's 60-V P-channel MOSFETs bring modern power efficiency, integration, and thermal advantages ideal for NewSpace’s evolving needs where size, weight, and efficiency are critical. For NewSpace missions where radiation levels are moderate or managed by system shielding, Infineon’s power MOSFETs can offer a compelling trade-off with superior electrical performance and integration benefits.

[1] Infineon Technologies. (2021). Infineon's 60 V P-channel power MOSFETs for NewSpace applications. Retrieved from https://www.infineon.com/cms/en/product/power/power-management-and-modulation/power-mosfets/60-v-p-channel-power-mosfet/

[2] Infineon Technologies. (2020). Infineon's OptiMOS™ 5 technology. Retrieved from https://www.infineon.com/cms/en/product/power/power-management-and-modulation/power-mosfets/optimos-5-technology/

[3] Infineon Technologies. (2021). Infineon's 60 V P-channel power MOSFETs for NewSpace applications. Retrieved from https://www.infineon.com/cms/en/product/power/power-management-and-modulation/power-mosfets/60-v-p-channel-power-mosfet/

[4] Infineon Technologies. (2021). Infineon's 60 V P-channel power MOSFETs for NewSpace applications. Retrieved from https://www.infineon.com/cms/en/product/power/power-management-and-modulation/power-mosfets/60-v-p-channel-power-mosfet/

[5] Infineon Technologies. (2020). Infineon's CoolMOS™ superjunction technology. Retrieved from https://www.infineon.com/cms/en/product/power/power-management-and-modulation/power-mosfets/coolmos-superjunction-technology/

1. In the realm of space-and-astronomy, Infineon's OptiMOS™ technology within their 60-V P-channel MOSFET demonstrates a significant advancement for NewSpace applications, as it offers improved efficiency and power density compared to traditional rad-hardened devices, primarily used in finance for space missions requiring extreme radiations.
2. As the influence of science and technology on the industry continues to grow, Infineon's 60-V P-channel MOSFET with advanced packaging technologies provides a cost-optimized, radiation-tolerant solution, making it an attractive option for NewSpace developers, and contributing to the miniaturization and affordability of satellite and spacecraft designs.

Read also: