Renesas unveils high-performance 650V Gallium Nitride Field-Effect Transistors, aimed at electric vehicle charging and power electronics applications.
Renesas Electronics, a leading supplier of advanced semiconductor solutions, has announced the release of its new fourth-generation plus (Gen IV Plus) high-voltage 650V gallium nitride (GaN) field-effect transistors (FETs). These innovative components are designed for multi-kilowatt power systems in AI data centers, server power supplies, e-mobility charging, uninterruptible power supplies (UPS), battery energy storage, and solar inverters.
Key Features of the Gen IV Plus GaN FETs
1. High-efficiency GaN technology combined with a silicon-compatible gate drive input, which significantly reduces switching power loss while maintaining the operating simplicity of silicon FETs. 2. Built on the robust SuperGaN® platform, employing a depletion mode (d-mode) normally-off architecture pioneered by Transphorm. 3. Low-loss d-mode technology offers superior efficiency compared to silicon, silicon carbide (SiC), and older GaN technologies. 4. Reduction in power loss through lower gate charge, output capacitance, crossover loss, and dynamic resistance. 5. Possess a higher 4V threshold voltage, which is not achievable with current enhancement mode (e-mode) GaN devices. 6. The devices have a 14% smaller die size than the previous Gen IV platform, enabling a lower RDS(on) of 30 milliohms, improving conduction efficiency. 7. Available in TOLT, TO-247, and TOLL package options, offering engineers flexibility in thermal management and printed circuit board (PCB) design tailored to specific power architectures.
Applications of the Gen IV Plus GaN FETs
1. AI data centers and server power supply systems, particularly supporting new 800V high-voltage DC (HVDC) architectures. 2. E-mobility charging systems for electric vehicles. 3. Uninterruptible power supplies (UPS) and battery backup devices. 4. Battery energy storage systems for grid and renewable energy stabilization. 5. Solar inverters, improving power conversion efficiency and thermal performance.
The Gen IV Plus GaN FETs deliver optimized power efficiency, reduced losses, and better thermal management capabilities suited for high-performance, multi-kilowatt power conversion applications in modern electronic systems. The traditional TO-247 package offers enhanced thermal dissipation suitable for applications requiring higher power handling.
Renesas' new GaN FETs feature silicon-compatible gate drive inputs, allowing the use of standard silicon MOSFET gate drivers rather than specialized drivers typically required by enhancement-mode (e-mode) GaN alternatives. Higher ratings can be achieved through paralleling configurations in these GaN FETs.
Surface-mount options (TOLL and TOLT) provide bottom- or top-side thermal conduction paths, optimizing cooling and aiding simpler device paralleling. Primit Parikh, Vice President of the GaN Business Division at Renesas, stated that future versions of these devices will combine SuperGaN technology with Renesas' drivers and controllers to deliver complete power solutions.
The rollout of Gen IV Plus GaN devices marks a new product milestone for Renesas Electronics, following their acquisition of Transphorm last year. These Gen IV Plus GaN components offer lower switching losses, smaller size, and increased thermal efficiency compared to silicon and silicon carbide (SiC) counterparts. They can be used as standalone components or integrated into complete system solution designs with Renesas controllers or drivers.
Technology and power solutions are integral aspects of Renesas Electronics' latest product release, the fourth-generation plus (Gen IV Plus) high-voltage 650V gallium nitride (GaN) field-effect transistors (FETs). The Gen IV Plus GaN FETs leverage technology to deliver optimized power efficiency, reduced losses, and improved thermal management capabilities, making them ideal for high-performance, multi-kilowatt power conversion applications in modern electronic systems. Furthermore, the Gen IV Plus GaN FETs, with their silicon-compatible gate drive inputs, represent a significant step towards complete power solutions that integrate Renesas' drivers and controllers.
